节点文献
压痕诱发GaAs塑性变形区的层错结构
Stacking-fault structure induced by indentation in GaAs
【摘要】 用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。结果表明,在压痕周围除了产生玫瑰型分布的位错组态和二次对称的孪晶结构外,还形成了层错。层错有两种类型:一种由两个具有不同Burgers矢量的不全位错组成,另一种则由具有相同Burgers矢量的不全位错组成。
【Abstract】 Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment. The results show that the formation of stacking-faults is the main result of the plastic deformation in this kind of materials besides the formation of the rosette-like dislocations and twofold-symmetrical twins. There are two types of stacking-faults occurred around the indentation: one is composed of two partial dislocations with different Burgers vectors, and the other only consists of one kind of partial dislocations. A model for the formation of the stacking-faults is discussed.
【Key words】 inorganic non-metallic materials; GaAs single crystal; indentation; plastic deforma- tion; stacking-fault; electron microscopy;
- 【文献出处】 材料研究学报 ,Chinese Journal of Materials Research , 编辑部邮箱 ,2003年04期
- 【分类号】TB303
- 【被引频次】2
- 【下载频次】102