【摘要】 用直流溅射法在Si基片上制备了 2 5 0nm厚的Al膜 ,并在不同退火温度下进行退火处理 ,用X射线衍射和光学干涉相位移法对薄膜的微结构及应力随退火温度的变化进行了研究。结构分析表明 :退火后的Al膜均呈多晶状态 ,晶体结构仍为面心立方 ;随着退火温度由 2 0℃升高到 4 0 0℃ ,薄膜的平均晶粒尺寸由 2 2 8nm增加到 2 5 1nm ;薄膜晶格常数在不同退火温度下均比标准值 4 0 4 96 A稍小。应力分析表明 :随退火温度的升高 ,Al膜应力减小 ,30 0℃时平均应力减小为 2 730× 10 8Pa且分布均匀 ;在 4 0 0℃时选区范围内应力差仅为 3 82 8× 10 8Pa。更多还原

【Abstract】 Al films,deposited on Si wafers by DC sputtering,were studied by X-ray diffraction and optical phase transition techniques at different annealing temperatures.The result of stress analysis shows that the stress is relaxed and well-distributed as annealing temperature increases from room temperature to 400℃.The result of microstructure analysis shows that the annealed Al films consist of fcc-Al nanoparticles,and the mean size of the nanoparticles increases from 22.8nm to 25.1nm with annealing temperature from 20℃ to 400℃.The lattice constant of the Al nanoparticle(4.04672)was found to be slightly smaller than that of the standard value(4.04960).更多还原