【摘要】 采用零蠕变法测量Si(111)单晶片上沉积的TiAl Al多层膜界面自由能。其实验方法为 :采用基片曲率法测量TiAl Al多层膜升温退火过程中的应力变化 ,分别在 35 0℃、4 0 0℃、4 5 0℃和 5 0 0℃保温 ,发现 5 0 0℃时多层膜达到平衡状态 ,最终的平衡应力为 0 5 7MPa ,计算TiAl Al的界面自由能γint为 0 19J m2 。更多还原

【Abstract】 Interfacial free energy of TiAl/Al multilayer thin film on Si(111) substrates was determined by zero creep method.The experimental way was:substrate curvature measurements were performed on monitoring the stress history of TiAl/Al multilayer thin film,which was heated to 350℃,400℃,450℃ and 500℃ for several hundreds of minutes.It is found that TiAl/Al multilayer thin film attained a state of equilibrium at 500℃,and the equilibrium stress was 0^57MPa.The result of interfacial free energy γ int of TiAl/Al is calculated to be 0^19J/m+2.更多还原