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LPCVD水解法制备TiO2薄膜
Growth of Titanium Dioxide Thin Films by LPCVD
【摘要】 本文利用LPCVD法水解四异丙醇钛 (TTIP)制备TiO2 薄膜 ,研究了制备过程中水解TTIP的反应动力学。通过对沉积温度和沉积率关系的研究 ,计算出TTIP水解反应表观活化能为 5 9 85kJ mol。沉积温度不仅影响反应速率 ,还对TiO2 薄膜结构、表面形貌有决定性的作用。XRD和Raman分析表明 :TTIP水解法制备TiO2 薄膜 ,薄膜结构主要依赖于沉积温度。 180℃~ 2 2 0℃沉积TiO2 薄膜为非晶态 ,2 40℃~ 3 0 0℃沉积为锐钛矿和非晶态混杂结构。在水分压对TTIP水解反应影响的研究中发现 ,水分压为零时 ,TTIP发生热解反应 ,TiO2 沉积率不为零 ,热解反应 2 40℃无锐钛矿特征峰出现。这说明水解反应制备TiO2 有利于降低锐钛矿的生长温度。氧分子的加入可以消除TiO2 薄膜表面的“针孔”。
【Abstract】 TiO-2 thin films were deposited by low pressure chemical vapor deposition using TTIP(titanium t-isopropoxide) and water as reactants on glass and Si substrates.The film growth was performed in the range of 180-300℃ in order to study the effects of temperature on the growth rate.The average activative energy is 59^85KJ/mol.AFM and XRD experiments show that the substrate temperature has obvious effects not only on growth rate,but also on the microstructure and crystalline structure of TiO-2 films.Water vapor introduced into the reaction system leads to a higher growth rate over the H-2O pressure range 0-12Pa.The addition of extra oxygen can diminish the pinhole on the TiO-2 films,and has little effect on the growth rate.
【Key words】 chemical vapour deposition(CVD); titanium dioxide; hydrolysis; kinetic;
- 【文献出处】 材料科学与工程学报 ,Materials Science and Engineering , 编辑部邮箱 ,2003年03期
- 【分类号】TB43
- 【被引频次】21
- 【下载频次】250