【摘要】 采用Sol Gel工艺在普通载玻片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al3+离子掺杂的ZnO透明导电薄膜。利用SEM、XRD等分析手段对薄膜进行了表征。研究结果表明 :所制备的薄膜为纤锌矿型结构 ,表面平整、致密。通过标准四探针法及UVS透射光谱详细研究了Al3+ 离子掺杂的ZnO薄膜的电学与光学性能。实验发现 ,当Al3+ 离子掺杂浓度为 0 8%时 ,前处理温度为 40 0℃ ,退火温度为 5 5 0℃ ,真空退火温度为 5 5 0℃时 ,薄膜具有较好的导电性 ,电阻率为 3 0 3× 10 - 3Ω·cm ,其在可见光区的透过率超过 80 %。更多还原

【Abstract】 The Al 3+-doped ZnO transparent-conducting films were prepared on glass subtrates(microscope sildes) by Sol-Gel method from Zn(OCA) 2·H 2O-2methoxyethanol solutions containing monoethanolamine. The films have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface, high visible transmittance from 400-800nm and high conductivity. Thin films were characterized using scanning electron microscopy, X-ray diffraction. The results proved that the films were homogenous, dense with the crystalline phase of hexagonal wurtzite. By the measurements of standard Four-Probe method and UV-Vis transmittance spectroscopy, the electrical and optical properties of Al 3+-doped ZnO thin films were investigated. The experiental data show that the favourable electrical conducting thin films have been achieved with resistivity of 3.03×10 -3Ω·cm and the transmittance of >80% in 400-800nm visible region derived by Al/Zn ratios of 0.8%; re-heat treatment at 400℃ for 10min; annealing at 550℃ for 1h and annealing in vacuum at 550℃ for 1h.更多还原