节点文献
衬底温度对沉积的NiTi薄膜晶化行为的影响
Effect of substrate temperature on crystallization behavior of NiTi thin films
【摘要】 将采用直流磁控溅射方法制备的NiTi薄膜沉积在热的衬底上,应用X射线散射和小角X射线散射技术研究了NiTi合金薄膜中生成的晶化粒子的界面特征和晶粒大小.结果表明:衬底加热可降低薄膜的晶化温度,衬底温度在350℃以上,溅射的NiTi薄膜已部分晶化;衬底温度在350、370℃和420℃溅射的NiTi薄膜,对应的晶化粒子的半径分别是2 40、2 59、2 81nm;薄膜中的晶化粒子以形核长大的方式进行,结晶粒子与基底之间有清晰的界面.
【Abstract】 NiTi thin films were deposited on hot substrate by D.C. magnetron sputtering at substrate temperatures of 350?370 ℃ and 420 ℃, respectively, the interfacial characteristics and the size of the crystalline particles in NiTi thin films were studied using Xray diffraction (XRD) and Smallangle Xray Scattering (SAXS), and the results show that the crystallization temperature is reduced, the films deposited on substrates above 350 ℃ are partly crystallized; the sizes of crystalline particles obtained are 240 nm?259 nm and 281 nm, for substrate temperatures of 350 ℃?370 ℃ and 420 ℃ respectively;and the crystalline particles of NiTi film deposited on heated substrate have a sharp interface between crystallized and amorphous phases.
【Key words】 NiTi thin films; crystalline particles; small angle X-ray scattering;
- 【文献出处】 材料科学与工艺 ,Material Science and Technology , 编辑部邮箱 ,2003年03期
- 【分类号】O484
- 【被引频次】8
- 【下载频次】113