【摘要】 采用体硅微机械加工技术和扩散技术,制作压阻式高量程微加速度计,设计量程为50000gn。芯片材料为单晶硅,采用双列扁平陶瓷封装。为了测量其动态灵敏度,使用Hopkinson杆在约40000gn的加速度水平下进行了冲击校准。在电桥电压为6.33V的情况下,被测微加速度计的灵敏度为1.26μV/gn。更多还原

【Abstract】 A piezoresistive highgn microaccelerometer, whose capacity is designed up to 50#000#gn,has been developed by using silicon micromachining and diffusion techniques.The chip is made of singlecrystal silicon and is packaged with ceramics.In order to determine the dynamic sensitivity,shock calibration tests are performed by using Hopkinson bar at up to 40#000#gn acceleration level.The microaccelerometer has a measured sensitivity of 1.26 μV/gn with a 6.33#V bridge excitation voltage.更多还原