【摘要】 利用有限元分析方法、借助 ANSYS软件 ,对 SOI单晶硅压力传感器进行一系列的分析和计算机模拟 ,探讨了传感器应变膜在固定宽度或固定面积条件下、宽长比对理论输出的影响 ,以及应变膜厚度对理论输出的影响 ,给出了设计应变膜的优化方案 ;并对根据模拟结果首次制作的 SOI单晶硅压力传感器进行了测量 ,结果与理论值符合得较好更多还原

【Abstract】 Under the guide of Finite Element Analysis (FEA) theory, we analyzed and simulated a series of SOI single crystal silicon pressure sensor by using ANSYS software. We discussed how width height ratio affects theoretical output under the term of fixed width or fixed area, as well as how thickness of strain membrane affects theoretical output. We also presented optimal design of strain membrane. At last, we fabricated SOI pressure sensors under the guide of the results came from simulations, then measured them. Results are identical with theoretical output.更多还原