节点文献
用改进的EM模型研究数字集成晶体管中的寄生晶体管效应
AN IMPROVED EM MODEL TO STUDY THE EFFECTS OF PARASITE TRANSISTORS IN DIGITAL INTEGRATED TRANSISTORS
【摘要】 利用基尔霍夫电流定律修改双极晶体管的EM (Ebers Moll)模型 ,使得它适合描述 4层结构的数字集成晶体管 .这样通过流经各个PN结的电流的变化 ,可以研究数字集成晶体管在不同工作状态下寄生晶体管的效应 .
【Abstract】 The Ebers Moll (EM) model of transistors is improved by using Kirchhoffs law so as to characterize digital integrated transistors that have a four layer structure. By comparing the variation of the current flowing through each PN junction of transistors, the effects of parasite transistors in digital integrated transistors can be studied under different working states, especially under cut off state and saturation.
【基金】 国家自然科学基金资助项目 (60 2 440 0 4) ;北京市自然科学基金资助项目 (4962 0 0 4)
- 【文献出处】 北京师范大学学报(自然科学版) ,Journal of Beijing Normal University(Natural Science) , 编辑部邮箱 ,2003年02期
- 【分类号】TN32
- 【被引频次】1
- 【下载频次】71