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SiO₂/Ta界面反应及其对Cu扩散的影响

Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion

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【Author】 LONG Shibing, MA Jidong,YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai XIA YangDepartment of Materials Physics, University of Science and Technology Beijing, Beijing 100083, ChinaMicroelectronic Research & Development Center, The Chinese Academy of Sciences, Beijing 100029, China

【机构】北京科技大学材料物理系；中国科学院微电子中心；中国科学院微电子中心北京 100083；北京 100083；北京 100029；北京 100029；

【摘要】利用磁控溅射方法在表面有SiO2层的Si基片上溅射Ta薄膜,采用X射线光电子能谱研究了SiO2/Ta界面以及Ta5Si3标准样品,并进行计算机谱图拟合分析.实验结果表明在制备态下在SiO2/Ta界面处有更稳定的化合物新相Ta5Si3和Ta2O5生成.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡.更多还原

【Abstract】 Ta films were deposited on Si substrates precoated with SiO2 by magnetron sputtering. The SiO2/Ta interface and the Ta5Si3 standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO2/Ta interface. The more stable products Ta5Si3 and Ta2O5 may be beneficial to stop the diffusion of Cu into SiO2.更多还原