【摘要】 在硅衬底上外延生长一层Si_1-xGe_x合金材料,它的带隙随组分x的增加而变窄,如果用Si_1-xGe_x窄带材料作晶体管基区,利用硅作为集电极和发射极构成双极晶体管,就可以很容易实现器件的高频、高速、大功率。设计了一种以Si/Si_1-xGe_x/Si为纵向结构,梳状10指发射区为横向结构的异质结晶体管,利用双台面工艺方法制造出具有如下参数的器件:电流增益β=26、V_CB=7V、I_CM≥180mA、f_T≤ 2GHz,实现了高频大功率,充分显示出Si/Si_1-xGe_x材料的优越性。更多还原

【Abstract】 The development of information technology requires devices with higher speed, higher frequency, at the same time with more power and better thermal stability. The conventional devices based on silicon can hardly satisfy the requires above because of its inhouse physical characters. Si/Side HBTs is the right thing to solve this problem. SiGe alloy grown on silicon substrates has band gap which narrows down with the increase of Ge component. High frequency, high speed and high power are easily realized on bipolar transistors with SiGe base and Si collector and emitter. The ten-finger emitter Si/SiGe HBTs with parameters of β= 26, VCB =7 V, Icm≥ 180 mA and fT ≥ 2 GHz, has been optimizedly designed as comb structure, and fabricated by the double-mesa technological process.更多还原