【摘要】 研究了在直拉单晶硅和铸造多晶硅中经 110 0℃热处理快冷或慢冷条件下所形成的铁沉淀规律及其对少数载流子扩散长度的影响 .红外扫描仪照片显示在直拉单晶硅中慢冷却形成的铁沉淀密度较低 ,而且其尺寸较大 ;在铸造多晶硅中 ,铁易在晶界上沉淀 ,沉淀规律也依赖于冷却速度 .表面光电压仪测试结果表明 :无论在直拉单晶硅材料中还是在铸造多晶硅材料中 ,快冷形成的铁沉淀对少数载流子扩散长度影响更大 .实验结果可以用铁沉淀生成的热力学和动力学规律解释更多还原

【Abstract】 The behavior of iron precipitation in Czochralski silicon (Cz Si) and cast multicrystalline silicon (mc Si) annealed at 1100℃ followed by air cooling or slow cooling is studied by the means of scanning infrared microscope (SIRM) and surface photovoltage (SPV).The SIRM images show that the iron precipitation with large size and low density is formed in Cz Si sample under slow cooling.In mc Si,iron preferably precipitates in grain boundaries,and the behavior of precipitation also depends on cooling rate.The SPV results reveal that the minority carrier diffusion length for the samples under air cooling is much shorter than that for the samples under slow cooling no matter what kind of silicon material.The experiment results prove the thermodynamics and kinetics of iron precipitation in silicon.更多还原