【摘要】 利用室温下反应磁控溅射结合炉退火的方法在P Si(10 0 )衬底上制备了Al2 O3 栅介质层 ,研究了不同的溅射气氛和退火条件对Al2 O3 栅介质层物理特性的影响 .结果表明 :在较高温度下N2 气氛中退火有助于减小泄漏电流 ;在O2 气氛中退火有助于减少Al2 O3 栅介质中的氧空位缺陷 .对Al2 O3 栅介质泄漏电流输运机制的分析表明 ,在电子由衬底注入的情况下 ,泄漏电流主要由Schottky发射机制引起 ,而在电子由栅注入的情况下 ,泄漏电流可能由Schot tky发射和Frenkel Poole发射两种机制共同引起 .更多还原

【Abstract】 Al 2O 3 gate dielectric thin films are deposited on P-Si(100) substrate by the method of reacting magnetron sputtering and furnace annealing.The impacts of different sputtering atmospheres and annealing conditions are studied.The results show that annealing in N 2 ambience at higher temperature can reduce the leakage current significantly,and annealing in O 2 ambience can effectively decrease the oxygen vacancy in Al 2O 3 films.The study of the leakage current conduction mechanisms of Al 2O 3 gate dielectric films shows that the leakage is induced mainly by Schottky emission mechanism for substrate electron injection,while both Schottky emission and Frenkel-Poole emission mechanism may contribute to the leakage current for gate electron injection.更多还原