【摘要】 研究了直拉硅单晶片在氮气氛下热处理时的表面氮化 ,利用了XPS(X射线光电子谱 )、SEM(扫描电子显微镜 )、金相显微镜、XRD(X射线衍射仪 )等手段研究了在高纯氮和非高纯氮保护条件下不同温度热处理后的样品表面 ,结果发现只有用高纯氮保护和温度高于 110 0℃的条件下 ,氮气才能与硅表面发生反应 ,生成氮化硅 (Si3 N4 )薄膜 ,否则氮保护中微量的氧气会和硅表面发生反应 ,生成二氧化硅 (SiO2 )薄膜 .更多还原

【Abstract】 Nitridation of Czochralski (CZ) silicon in nitrogen ambience and nitridation mechanism are studied.The samples annealed in pure and normal nitrogen at different temperature are investigated using XPS(X-ray photoelectron spectroscopy),SEM(scanning electron microscopy),optical microscopy,and XRD(X-ray diffraction).It is found that silicon nitride(Si 3N 4) film is generated during heat treatment only in pure nitrogen and at high temperature (>1100℃).Silicon dioxide(SiO 2) is found in the samples annealed in normal nitrogen because of a little of oxygen mixed in the ambience,which is much easier to react with silicon than in pure nitrogen.更多还原