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Co在Si(100)表面化学吸附的电子结构和性质
Electronic Structure and Characteristic of Co Chemisorptionon Si (100) Surface
【摘要】 用紧束缚下的Muffin tin轨道线性组合方法研究了单层Co原子在理想的Si(10 0 )表面的化学吸附 .计算了Co原子在不同位置时吸附体系的能量 .结果表明 ,Co原子在C位 (四度位 )时吸附最稳定 ,在Co/Si(10 0 )界面存在Co、Si混合层 .同时对电子转移情况和层投影态密度进行了研究 .
【Abstract】 The adsorption of one monolayer Co atoms on an ideal Si (100) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method.Energies of adsorption systems of a Co atom on different sites are calculated.It is found that the adsorbed Co atoms are more favorable on C site (four-fold site) than on any other sites on Si(100) surface and a mixed layer of Co and might exist at Co/Si(100) interface.The charge transfer and the layer projected density of states are also studied.
【关键词】 化学吸附;
钴;
硅;
低指数单晶面;
金属薄膜;
【Key words】 chemisorption; cobalt; silicon; low index single crystal surfaces; metallic films.;
【Key words】 chemisorption; cobalt; silicon; low index single crystal surfaces; metallic films.;
【基金】 河南省自然科学基金资助项目 (批准号 :0 1110 5 1111)~~
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2003年10期
- 【分类号】O472.1
- 【被引频次】6
- 【下载频次】157