【摘要】 利用反应溅射方法制备了等效氧化层厚度为 3 45nm的Al2 O3栅介质MOS电容 ,研究了Al2 O3作为栅介质的瞬时击穿和恒压应力下的时变击穿等可靠性特征 .击穿实验显示 ,样品的Al2 O3栅介质的等效击穿场强大小为1 2 8MV/cm .在时变击穿的实验中 ,Al2 O3栅介质表现出类似于SiO2 的软击穿现象 .不同栅压应力作用的测试结果表明 ,介质中注入电荷的积累效应是引起软击穿的主要因素 ,其对应的介质击穿电荷QBD约为 30～ 60C/cm2 .更多还原

【Abstract】 The MOS capacitor with Al 2O 3 dielectric of 3 .45nm equivalent oxide thickness (EOT) is fabricated by reactive sputter.The reliability characteristics of Al 2O 3 dielectric are investigated in the terms of time-zero breakdown and TDDB.The breakdown experiments determine that the equivalent breakdown electric field of Al 2O 3 dielectric is 12.8MV/cm.In the TDDB experiments,the Al 2O 3 dielectric shows the soft breakdown characteristic l ike SiO 2.The results of experiments for various gate voltage stress indicate that the charge which inject dielectric is the major factor of soft breakdown,and the dielectric breakdown charge Q BD is 30～60C/cm 2.更多还原