【摘要】 分析了SOI器件各结构参数对器件性能的影响 ,给出了器件各结构参数的优化方向 ,找出了可行硅膜厚度和可行沟道掺杂浓度之间的设计容区 .在部分耗尽与全耗尽SOI器件的交界处 ,阈值电压的漂移有一个峰值 ,在器件设计时应避免选用这一交界区 .此外 ,随着硅膜厚度的减小 ,器件的泄漏电流随着沟道掺杂浓度的不同 ,有一个极小值 .通过模拟分析发现 ,只要合理选择器件的结构参数 ,就能得到性能优良的SOI器件更多还原

【Abstract】 The effect of SOI device structure parameters on device performance is investigated.The analyses present the optimal direction of the structure parameters and give the design permitted region of the feasible silicon film thickness and the feasible channel doping.It is also shown that there is a peak value of threshold voltage rolling off between the partly depleted and fully depleted SOI device.This point should be avoided when designing device.As long as the structure parameters of the device are selected reasonably,the fine performance of device can be achieved.更多还原