【摘要】 用超高真空化学气相淀积系统在Si(1 0 0 )衬底上生长了多层Ge量子点 .分别用TEM和AFM分析了埋层和最上层量子点的形貌和尺寸 ,研究了量子点层数和Si隔离层厚度对上层Ge量子点的形状和尺寸分布的影响 .观察到样品的低温PL谱线有明显蓝移 (87meV) ,Ge量子点的PL谱线的半高宽度 (FWHM )为 46meV ,说明采用UHV/CVD生长的多层量子点适合量子光电器件的应用更多还原

【Abstract】 Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).The morphology and size distribution of embedded and upper Ge dots are studied by TEM and AFM respectively.The influences of number of layers and thickness of Si spacer on upper Ge dots are investigated as well.An apparent blue shift (87meV) is observed from the PL sp ectrum at 10K.FWHM of Ge dots NP peak is 46meV,which indicates the narrow size d istribution of stacked Ge dots grown by UHV/CVD.更多还原