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光电双基区晶体管的工作机理

Principle of Photoelectric Dual Base Transistor

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【作者】 夏克军李树荣李丹郑云光毛陆虹郭维廉

【Author】 Xia Kejun,Li Shurong,Li Dan,Zheng Yunguang,Mao Luhong and Guo Weilian(School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China)

【机构】 天津大学电子信息工程学院天津大学电子信息工程学院 天津300072天津300072天津300072

【摘要】 通过分析光电双基区晶体管 (PDUBAT)内部载流子的二维传输过程 ,获得它的物理模型 ,得出PDUBAT是个新型光控振荡器的结论 ,并依此模型给出了它的等效电路 ,利用SPICE程序得到的一系列计算结果与实验结果是一致的 .结合这些计算结果 ,完整解释了PDUBAT产生耦合、负阻、振荡的物理过程 .给出了起振电压 (输出电流峰值电压 )、振荡频率随光强变化的关系式 ,定性解释了相应的实验结果

【Abstract】 It is concluded that photoelectric dual base transistor (PDUBAT) is a novel photon controlled oscillator using a physical model about PDUBAT which is gained by analysis of two dimension transportation of its internal charge carriers,and it is indicated that the so called negative resistance is not a general one and it is attributed to PDUBAT’s oscillation.An equivalent circuit is brought forward according to the model presented.The results calculated by SPICE are consistent with the experimental ones.This work interprets PDUBAT’s phenomena of coupling,negative resistance and oscillation respectively for the first time with the aid of the calculated results.Furthermore,functional relationships between the intensity of light injected and the frequency of oscillation,the threshold voltage of oscillation (the voltage at the peak of output current) are deduced,which qualitatively explain the corresponding experimental results.

【关键词】 振荡器负阻光电器件模拟
【Key words】 oscillatornegative resistancephotoelectric devicesimulation
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2003年08期
  • 【分类号】TN32
  • 【被引频次】3
  • 【下载频次】50
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