【摘要】 采用超高真空化学气相沉积技术 ,在 n型重掺 Si衬底上生长了轻掺的薄硅外延层 ,利用扩展电阻和原子力显微分析对外延层进行了检验 .结果表明 ,重掺 Si衬底与薄硅外延层之间的界面过渡区陡峭 ,外延层厚度在亚微米级 ,掺杂浓度为 10 1 7cm- 3.在此外延片上制备了高频肖特基二极管的原型器件 ,与传统的硅基肖特基二极管相比截止频率有了大幅提高更多还原

【Abstract】 Light-doped Si epilayers are grown on heavy-doped n-type Si substrates by ultra-high vacuum chemistry vapor deposition.Spreading resistance profile and atomic force micro-spectra are used to investigate the depth and surface profiles of Si epilayers.The results show that there is a sharp transitional region between n-Si epilayers and n ++-Si substrates.The thickness and carrier concentration of n-Si epilayers were about 0.5μm and 1×10 17cm -3,respectively.Prototype Schottky barrier diodes with high frequency response are fabricated using Si epilayers,which have higher cut-off frequency than the conventional SBD.更多还原