【摘要】 通过测量界面陷阱的产生 ,研究了超薄栅 n MOS和 p MOS器件在热载流子应力下的应力感应漏电流( SIL C) .在实验结果的基础上 ,发现对于不同器件类型 ( n沟和 p沟 )、不同沟道长度 ( 1、0 .5、0 .2 75和 0 .13 5 μm)、不同栅氧化层厚度 ( 4和 2 .5 nm) ,热载流子应力后的 SIL C产生和界面陷阱产生之间均存在线性关系 .这些实验证据表明 MOS器件减薄后 ,SIL C的产生与界面陷阱关系非常密切更多还原

【Abstract】 Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.更多还原