【摘要】 提出使用过氧化氢后处理多孔硅厚膜 .在乙醇、氢氟酸、过氧化氢溶液中 ,多孔硅样片做阴极施加电流密度为10 m A/cm2 ,希望通过后处理增强多孔硅表面的稳定性、光滑度和机械强度 .研究了厚度为 2 0 μm和 70 μm的多孔硅厚膜经过过氧化氢处理后的微结构 .扫描电镜图显示经过过氧化氢处理后的多孔硅厚膜表面的光滑度有极大的提高 ,X光衍射光谱揭示经过过氧化氢后处理后多孔硅表面形成了一层氧化膜更多还原

【Abstract】 The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2.更多还原