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GaAs/Ga_1-xAl_xAs量子阱线中类氢杂质的束缚能和光致电离截面（英文）

Binding Energy and Photoionization of Hydrogenic Impurities in GaAs/Ga_1-xAl_xAs Quantum Well Wires

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【Author】 Liu Jianjun 1,2,Su Hui 3,Guan Ronghua 2,4 and Yang Guochen 2(1 College of Physics,Hebei Normal University,Shijiazhuang 050016,China) (2 Institute of Physics,Hebei University of Technology,Tianjin 300130,China) (3 Institute of Physics,The Chinese Academy of Sciences,Beijing 100080,China) (4 Department of Applied Physics,North China Electric Power University,Baoding 071003,China)

【机构】河北师范大学物理学院；中国科学院物理研究所；河北工业大学物理所；河北工业大学物理所石家庄050016；天津300130；北京100080；天津300130；华北电力大学应用物理系；保定071003；

【摘要】通过在波函数中考虑量子线的限制方向和非限制方向的相关性 ,计算了 Ga As/ Ga1 - x Alx As量子阱线中类氢杂质的束缚能和光致电离截面 .结果表明光致电离截面的大小受量子线尺寸的影响 ,并且对于相同尺寸的量子线 ,有限深势阱中杂质态的光致电离截面要比无限深势阱中的大 .与他人的结果比较发现 ,所选波函数改进了体系的束缚能 ,并使光致电离截面减小 ,这使得结果更为合理更多还原

【Abstract】 The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous’s results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.更多还原