【摘要】 在带有应变SiGe沟道的SOIMOSFET结构中 ,把栅和衬底相连构成了新型的混合模式晶体管 (SiGeSOIBMHMT) .在SIVACO软件的器件数值模拟基础上 ,对这种结构的P型沟道管工作过程作了分析 ,并建立了数学模型 .提出在低电压 (小于 0 7V)下 ,衬底电极的作用可近似等效成栅 ,然后依据电荷增量 (非平衡过剩载流子 )的方法 ,推导出该结构的I V特性方程 .该方程的计算结果与器件模拟结果相一致 .更多还原

【Abstract】 Based on the structure of SOI MOSFET with a buried strained SiGe layer,a novel bipolar-MOS hybrid mode transistor (SiGe SOI BMHMT) is generated by connecting the gate to its substrate.A mathematic model for such a transistor of p type is presented grounding on the numerical device simulation carried out by the software SIVACO.It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply (<0.7V).The equation of its I-V characteristics is then deduced according to the method of charge increment.The calculated results of this equation are consistent with the ones from the numerical device simulation.更多还原