【摘要】 设计并生长了带有复合沟道的InP基HEMT材料,该材料具有较高的二维电子气浓度和迁移率。在使用In_xGa_1-xAs/In_0.53Ga_0.47As复合沟道时,当In组分等于0.7时得到较好的沟道输运性能;在使用InAs复合沟道时,得到了二维电子气浓度为2.3×10¹²/cm²、室温迁移率高达13600 cm²/V·s的性能优良的HEMT材料。更多还原

【Abstract】 We have designed and grown InP-based HEMT with composite channel, the materials achieve higher 2DEG density and mobility. With the use of InxGa1-xAs/In0.53Ga0.47As composite channel, the better channel conductivity is achieved at x =0.7. With the use of InAs composite channel, the corresponding electron mobility is as high as 13600cm2/V·s with 2DEG density of 2.3×10~12/cm2.更多还原