【摘要】 给出了基于SOI晶片、带隙中心位于1550nm的光子带隙材料及光子晶体波导器件的设计方法。采用基于超原胞的平面波展开法和基于完美匹配层边界条件的三维时域有限差分法,对二维光子晶体平板的带隙结构及光波传输进行仿真。在大量计算和优化的基础上,设计了适于248nm深紫外曝光和0.18μm离子束刻蚀工艺的光子晶体带隙材料及波导器件,得到了初步的工艺实验结果和样品SEM测试结果。更多还原

【Abstract】 Design and fabrication techniques for SOI-based photonic bandgap structures (PBG) and photonic crystal waveguides are presented. A method incorporating plane wave expansion (PWE) technique based on supercell with finite-difference time-domain (FDTD) technique based on full-vector is used. Photonic crystals and waveguide devices suitable for 248 nm deep UV lithography and 0.18 μm ion-beam etching are designed and optimized.更多还原