【摘要】 通过设计合适的温场，解决了重掺单晶生长过程中的组分过冷和位错密度高的问题，获得了高掺杂浓度高迁移率的无位错单晶。更多还原

【Abstract】 Proper temperature profile was designed to solve the problems of heavilydoped Germanium single crystal growth. High temperature gradient in the melt near the solid-liquid interface was required to prevent constitution supercooling, and lower temperature gradient in the crystal was obtained at the same time to decrease dislocations. High Hall mobility and freedislocation single crystal were obtained.更多还原