【摘要】 用低能双离子束淀积技术，在清洁的Si衬底上外延生长出了CeO2／Si异质结构。利用俄歇电子能谱、X射线光电子能谱的深度剖析技术对此类样品进行了测量分析。结果表明，样品界面清晰、陡峭，无氧化硅生成，这反映了外延层与Si衬底间过渡区很窄；外延层内组成元素Ce，O分布均匀，为正化学比CeO2相。原生样品经高温退火后，界面出现了氧化硅层，且过渡层增厚。最后讨论了有关影响CeO2／Si外延生长质量的因素，可认为高质量CeO2／Si结构生长的关键主要依赖于生长初期Si衬底表面不受氧化污染。为此，在IBD生长时，采取了一系列技术措施，得到了满意的结果。更多还原

【Abstract】 Epitaxial CeO2/Si hetterojunctions were fabricated by dual mass-selected low energy ion beam deposition. The depth profile of the epilayer and the interface of the as-received samples were studied with Auger electro spectroscopy and X-ray photoelectron spectroscopy. The results showed thet the samples have a well-defined,abrupt interface with none existence of silica, indicating a rather narrow transition layer between Si substrate and the CeO2 epilayer. The epilayer has an expected stoichometry of CeO2 with homogenous distributions of Ce and O. After high temperature annealing in oxygen ambient,silica layer was found to grow at the interface, and the transitional interlarer became thicker. CeO2/Si epitaxial growth may depend on a combination of factors; we suggest that an oxide free,clean Si substrate is mainly responsible for high quality CeO2/Si heterojunctions fabrication.更多还原