【摘要】 用原位电阻法监测了无限层薄膜（Sr0．7Ca0．3）0．9K0．1CuO2沉积时电阻随时间（即膜厚）的变化过程，以及薄膜热处理过程中电阻随温度的变化过程。通过监测了解到氧含量在无限层薄膜中起着重要作用。沉积完毕对真空室充入0．1MPaO2时薄膜吸氧。对薄膜热处理时，薄膜吸氧或放氧发生在330℃以上。低真空条件下的热处理过程是可逆的；而在高真空条件下，薄膜在高温时分解，显示出半导体行为。该方法直观有效，也可以成为制备其他非绝缘薄膜的监测手段。更多还原

【Abstract】 In the growth of (Sr0.7Ca0.3)0.9K0.1CuO2 in finite layer film, the resistance of the films on SrTiO3 substrate was in-situ monitored because of its resistivity depends strongly on film thickness in growth and annealing temperature. The results revealed that oxygen content plays an important role in the film growth. Considerable oxygen absorption was observed after deposition followed by filling in 0.1 MPa oxygen in the vacuum chamber; the absorption and desogtion of oxygen in annealing were found to occur at 330 ℃. We found that the low vacuum annealing results in a reversible variations in resistance and that when annealed at 550℃ in high vacuum, the films decompose, showing semiconducting behaviors.The in-situ resistance monitoring, which is simple and effective, may also be feasible in a conductive film growth.更多还原