【摘要】 利用局域分子束外延技术生长了含有SiGe量子阱的岛状结构。实现了生长的岛状结构侧面不与掩模材料相接触。这种含有量子阱的岛状结构具有比相同结构量子阱强20多倍的光致发光强度。更多还原

【Abstract】 Islands containing SiGe quantum wells have been successfully fabricated with local molecular beam epitaxy,which possess well defined boundaries without contacting to surrounding masking materials. The photolumienscence intensity of the islands with quantum wells buried inside was founded to be 20 times stronger than that of ordinary quantum was.更多还原