【摘要】 本文介绍我们通过掩膜图形的设计，在（１００）单晶硅上利用氢氧化钾各向异性腐蚀制作错综复杂的正八边形单晶硅膜的方法。据此技术可获得最小外接圆半径仅为腐蚀深度的２．６７倍的小尺寸正八边形单晶硅膜，其力学性能大大优于同样面积的等厚方形单晶硅膜，满足微动力机械的要求。更多还原

【Abstract】 This paper introduces the manufacturing method of regular octagone single crystal Si membrane using anistropic etching with potassium hydroxide on the (100)single crystal Si chip through mask layout.By measus of theis thchnology the regular octagone single crystal Si-membrane can be obtained.Its radius of the least circumcircle is only 2 67 time of echted depth and mechanical performance however greatly better than the square single crystal-Si membrane in equal thickness and area.The demands of microdynamic machinery also can be met.更多还原