【摘要】 报道了用金属有机化合物化学气相沉积技术生长ＩｎＰ／ＧａＡｓ／ＩｎＰ量子阱结构，通过线性形变势理论计算表明该结构为Ⅱ型量子阱结构．低温光致发光测量结果与理论计算结果相符合更多还原

【Abstract】 InP/GaAs/InP strain quantum well structure has been fabricated by Low Pressure Metalorganic Vapor epitaxy (MOCVD).The calculation by using linear deformation potential theory indicates that the GaAs strain thin layer is Ⅱtype quantum well structure.Results from low temperature photoluminescence spectrum are in agreement with the theoretical calculation.更多还原