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负偏压对M0衬底上生长金刚石膜的影响

EFFECT OF NEGATIVE BIAS ON DIAMOND FILM GROWTH ON MO SUBSTRATE

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【作者】 冯斌廖克俊王万录秦友兰张智

【Author】 Feng Bin, Liao Kejun, Wang Wanlu, Qin Youlan, Zhang Zhi (Department of Applied physics, Chongqing University, Chongqing 400044)

【机构】 重庆大学应用物理系

【摘要】 研究用热灯丝化学气相沉积(HFCVD)法在M0衬底上生长多晶金刚石膜。实验研究表明,负偏压对金刚石膜生长的影响十分显著,这是负偏压极大地影响了金刚石的核密度引起的,研究表明,来自金刚石的发射电子对气体分子的撞击,加速了CH4、H2分子离化,在衬底表面附近形成了一等离子体区,使M0衬底上金刚石的核密度可达109cm-2

【Abstract】 In this paper,the growth of polycrystalline diamond films on M 0 substrate by HFCVD was studied. The experimental results showed that the negative substrate bias has a significant effect on the growth of diamond films. This is due to that nucleation density was greatly enhanced by negative bias. The studies indicated that the electrons from diamond coatings collide with reactive gas molecules and accelerated CH 4 and H 2 to be decomposed, igniting a plasma region near the substrate surface, and led to high nucleation density of diamond on M 0 substrate to be over 10 10 cm -2 。

【关键词】 CVD法金刚石膜核密度发射电子
【Key words】 CVDDiamond filmsNucleation densityEmission electron
【基金】 国家自然科学基金
  • 【文献出处】 微细加工技术 ,MICROFABRICATION TECHNOLOGY , 编辑部邮箱 ,1998年04期
  • 【分类号】O484.1
  • 【被引频次】4
  • 【下载频次】33
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