【摘要】 Ｋ吸附层的存在能促进ＧａＡｓ（１００）表面在室温下的氮化．光电发射测量为此提供了证据．在将Ｋ／ＧａＡｓ（１００）暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露Ｎ２ｐ峰，Ｇａ２ｐ和Ａｓ２ｐ芯能级谱中产生化学位移分量．就所研究的三种不同的Ｋ覆盖度（１／４，１／２和１ＭＬ）而言，１ＭＬ的那种显示了最强的促进作用．更多还原

【Abstract】 Abstract Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.更多还原