【摘要】 目前，微波低噪声放大器设计中采用的Ｒｎ－Ｇｎ噪声模型只适用于高频、窄带和源导纳（Ｇｓ≠０）情况，其应用范围有限，特别是不适用于低频段的低噪声放大器设计。本文对文献［１］提出的Ｅｎ－Ｉｎ噪声模型作了改进，使其不仅适用于高频、窄带，而且也适用于低频、宽带放大器的低噪声设计。进而推导出放大器Ｅｎ－Ｉｎ噪声模型与Ｒｎ－Ｇｎ噪声模型的等价关系，给出放大器Ｅｎ－Ｉｎ噪声模型的测量方法及实测结果。更多还原

【Abstract】 The RnGn noise model used in microwave lownoise amplifier design can be only used in the case of high frequency,narrow band and source conductance (Gs≠0). Its application scopes are limited. Especially it can not be used in low frequency lownoise design of an amplifier. This paper has improved the EnIn noise model proposed in reference so that it can be used not only in high frequency and narrow band,but also in low frequency, wide band and source reactance amplifier lownoise design. In addition, the equivalent relation between EnIn noise model and RnGn noise model is derived, and the measurement method of EnIn noise model parameters and the measurement results are given.更多还原