【摘要】 本文报告了一种新型电子工业清洗工艺。用该工艺清洗过的硅片上的钠残留量低于常规ｃｍｏｓ／ｓｏｓ栅氧化工艺，去重金属离子的能力及对器件参数的影响与常规ｃｍｏｓ／ｓｏｓ栅氧化工艺相当。新型清洗工艺具有操作简单，价格低廉等优点，无毒，无腐蚀性，对人体无危害，对环境无污染。更多还原

【Abstract】 This article reports a new type of electronic industry cleaning technique. The sodium content of the silicon wafer cleaning by means of the new cleaning technique is less as compared with that using the CMOS standard conventional cleaning technique. The new cleaning technique has the same ability in cleaning heavy metallic ions and the same qualities in device parameters as the common CMOS/SOS cleaning technique.The new cleaning technique is simple in operation, and low costs; moreover it is safe in application, no toxicity and no corrosiveness, harmless to human body, and no pollution to the environment.更多还原