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非晶态Se及掺杂Sb的Se薄膜晶化特性研究

Characteristics of Crystallization of Se Thin Films and Se Films Doped with Sb

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【作者】 叶水驰鲍海飞蓝慕杰

【Author】 Ye Shuici Bao Haifei Lan Mujie (Department of Astronautic electronics and Opto electronic Engineering,Harbin Institute of Technology,Harbin 150001,China)

【机构】 哈尔滨工业大学航天电子与光电工程系

【摘要】 利用光学显微镜和X射线衍射技术,分析了非晶态Se和掺杂Sb的Se薄膜的晶化特性。Se薄膜由于保存周期不同以及Sb掺杂到Se中的Sb含量的多少都会影响Se的晶化特性;在热处理下薄膜的晶化呈现各向异性的择优生长。分析了晶化过程中微裂纹的产生,晶界的产生和体积收缩。薄膜与衬底之间的热应力是产生微裂纹的主要因素。

【Abstract】 Characteristics of crystallization of amorphous Se films and Se films doped with Sb ware invesigated by using optical microscope and X ray diffraction technology.The shelf storing period of Se in room temperature and the content of Sb in Se thin film will have influence on its characteristics.The Se crystallization in both kinds of thin films have the preferred orientation because of the initialization of crystallization and the shelf storing period.Micro structures’change in pure Se thin films existed in thermal treatment.The generation of the micro cracking in the crystallzation of amorphous Se thin film was analyzed,The results showed that generation of micro cracking have relation with the grain boundary and the stress produced by volume contraction during crystallization because of the atoms reordering and atoms moving,and the thermal strain between the thin film and the substrate,also,is an important factor.

  • 【文献出处】 人工晶体学报 ,JOURNAL OF SYNTHETIC CRYSTALS , 编辑部邮箱 ,1998年01期
  • 【分类号】O751
  • 【被引频次】1
  • 【下载频次】40
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