【摘要】 研究了ＦｅＣｌ３溶液浓度、温度及样品在溶液中的运动速度对Ｃｕ蚀刻速度的影响。在所研究的溶液浓度范围内，蚀刻过程为扩散控制为主的过程；在溶液相对密度为１．２６～１．３２时Ｃｕ的蚀刻速度具有极值。Ｃｕ在ＦｅＣｌ３溶液中蚀刻其表面有ＣｕＣｌ膜的沉积，钝化膜对Ｃｕ的蚀刻有大的影响；蚀刻反应受Ｆｅ３＋通过钝化膜的扩散过程控制。试验拟定了初步的蚀刻工艺。更多还原

【Abstract】 The etching behaviors of copper have been investigated in FeCl3 etchant with the influence of relative density, temperature and relative velocity on etching rates. In the solutions studied, etching of copper in FeCl3 etchant is controlled by masstransport. The etching rate has a maximum in the solutions of relative density ranged from 1.26 to 1.32. The CuCl passivation film which was found in etching surface plays an important role in the etching process. The etching process is controlled by the Fe3+ diffusing through CuCl film. Etching process is preliminary estimated.更多还原