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铜价态对Zns掺铜电子结构的影响
EfFect of DifFerent Valence-state of Copper on the Electronic Structure of ZnS Doped with Copper
【摘要】 本文使用LMTO-ASA方法计算ZnS掺入激活剂铜所形成的铜发光中心的电子结构,分析了两种不同铜价态的影响.结果表明:尽管两种情形下禁带中铜3d能级均靠近价带顶,但掺杂二价铜时发光中心的能级结构符合Schon-Klasens模型,而掺杂一价钢的结果支持Williams-Prener模型.
【Abstract】 The electronic structures of luminescence centers in wurtzite ZnS doped withcopper are studied by using first--principles linear muffin ~tin--orbital method corn-biniflg atomic sphere approximation. The effect of monovalent or divalent oxidationstate of copper has been considered. Although tile levels of Cu 3d--like states appear in the forbidden gap and are located near the top of valence band in bothcasesg our results for ZnS:Cu2+ support the Sob6n--Klasens model while calculationsfor ZnS.Cu,:Vs (where Vs denotes sulfur vacancies) support the Williams--Prenermodel.
【Key words】 : luminescence center; electronic structure; ZnS doped with copper;
- 【文献出处】 量子电子学报 ,CHINESE JOURNAL OF QUANTUM ELECTRONICS , 编辑部邮箱 ,1998年06期
- 【分类号】TN244
- 【被引频次】5
- 【下载频次】91