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离子渗氮层γ′-Fe4N相内位错环和层错类型的鉴别

Distinguish Dislocation Loop from Stack Fault in Plasmanitrided Layer by Rare-earth Catalytic Penetration

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【作者】 刘玉先陈方生徐军

【Author】 Liu Yuxian,\ Chen Fangsheng,\ Xu Jun (College of Materials Science and Engineering, Shandong University of Technology, Jinan 250061)

【机构】 山东工业大学材料科学与工程学院

【摘要】 用透射电镜衍衬方法测定了稀土催渗离子渗氮层γ′ Fe4 N相内位错环及层错的类型。结果表明 ,位错环为b =13[111]空位型 ,其形成原因是 :在离子渗氮过程中 ,高能离子的持续轰击导致大量空位点缺陷的产生 ,部分空位聚集成片崩塌而形成位错环。层错类型为抽出型 ,两侧的不全位错是 16 〈112〉型Shockley不全位错

【Abstract】 The dislocation in γ′ Fe\-4N phase in the plasma nitrided layer and the imperfect dislocations on either side of the stack faults have been analyzed and determined by TEM diffraction method. The results show that the dislocation loops with b=1/3[111] are vacancy typed, the forming reason is that during the process of plasma nitriding the continuous bombardment of high energy ions lead to the formation of a great deal of point defects vacancies, Some of vacancy flakes are formed by gathering of the vacancies, and finally collapse develops into dislocation loops. However, stack faults are vacancy typed, the imperfect dislocation on either side of stack faults are a type of Shocklay imperfect dislocations with Burgers vector b=1/6〈112〉.

  • 【文献出处】 金属热处理学报 ,Transactions of Metal Heat Treatment , 编辑部邮箱 ,1998年04期
  • 【分类号】TG156.8
  • 【被引频次】6
  • 【下载频次】126
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