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InGaAsP/GaAs单量子阱SCH半导体激光器的液相外延
LPE of InGaAsP/GaAs Semiconductor Lasers
【摘要】 利用一种改进的液相外延技术进行了GaAs衬底上InGaAsP材料的生长,10K温度下光荧光半宽度(FWHM)为14meV,获得了阈值电流密度为300A/cm2的SCH多层结构外延片,宽台面激光器最大连续输出功率达到2.1W。
【Abstract】 A modified liquid phase epitaxy method was used to grow InGaAsP materials on the GaAs substrate. The FWHM of photoluminescence at 10 K was 14 meV, wafers of SCH multilayer epitaxial structures were obtained with a threshold current density of 300 A/cm 2, and the hgihest CW output power obtained from wide stripe lasers was 2.1 W.
- 【文献出处】 中国激光 , 编辑部邮箱 ,1998年01期
- 【分类号】TN248.4
- 【被引频次】3
- 【下载频次】75