【摘要】 研究了＜０００１＜和＜１２１０＞晶向蓝宝石（α－Ａｌ２Ｏ３单晶）在注入３６０ｋｅＶ．１×１０￣１６ｃｍ￣－２或１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋后产生的损伤、注入层的性能变化和退火行为。实验结果表明，退火过程中损伤的恢复和Ｉｎ的分布与退火气氛有关：在１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋注入时，注入层电阻率降低了１０个量级，大小为６．８×１０￣３·ｃｍ，表面损伤层的显微硬度提高了９２％；在３６０ｋｅＶ，１×１０￣１６ｃｍ￣－２的Ｉｎ＋注入时，其表面损伤层的显微硬度提高了４５％，在空气中不同温度下退火后，其显微硬度的变化和损伤的变化具有相同的规律。更多还原

【Abstract】 Single crystals of sapphire (α-Al2O3) implanted with 100keV, 6×1016cm-2 (In+) or 360keV, 1×1016cm2 (In+) have been studied. The implantation was carried out at room temperature but the annealing was performed isothermally in Ar or air atmosphere at temperature in the range from 600℃ to 1100℃ The Rutherford backscattering spectrometry and channeling of 2.4MeV He+ were used to observe the depth distribution of lattice damage and implants. The microhardness and resistivity of the implanted layer were investigated by means of the depth-sensing low-load indentation technique and the electrical conductivity measurement, respectively. Results on the structural changes are correlated with the measured changes of physical properties.更多还原