【摘要】 采用正电子湮没寿命测量方法研究了注量为６５×１０１５／ｃｍ２和１．４×１０１４／ｃｍ２、Ｅｎ≥１ＭｅＶ的裂变快中子辐照在掺Ｓｉ、Ｎ型单晶ＧａＡｓ中产生的缺陷。此辐照在ＧａＡｓ中产生单空位和双空位缺陷。缺陷浓度正比于辐照注量，高温退火产生王空位缺陷及小空位团。单空位、双空位和三空位缺陷的退火温度分别为２５０．４５０．６５０℃更多还原

【Abstract】 Defects in the Si- doped, N- type HB GaAs single cryatal irradiated by En≥1MeV fission neutrons with a fluence of 6.5 × 1015/cm2 and 1.4 × 1014/cm2 respectively have been investigated using the positron annihilation lifetime technique. The mono- and di- vacancies were created by the irradiation and the tri- vacancies were formed during annealing. The concentration of, defects was proportional to the irradiating neutron fluence . Three annealing stages were observed at 250, 450 and 650℃ corresponding to the mono-, di-and tri-vacancies, respectively.更多还原