节点文献
以NaN3作添加剂制取Si3N4晶须
FABRICATION OF Si 3N 4 WHISKER WITH NaN 3 AS ADDITIVE
【摘要】 用NaN3作添加剂,在0.5—1MPa的较低氮气压力下,以燃烧合成工艺,制取了柱状及针状氮化硅晶须.NaN3的分解不仅能够降低燃烧温度和氮气压力,提高氮化率及α-Si3N4的含量,还能作为氮化硅晶须生长的催化剂.作为固态氮化剂加入的NaN3过多则易形成Na的硅酸盐,使产物纯度降低;而加入量不足,则不能实现完全氮化.推测燃烧合成的氮化硅晶须是通过气相沉积(VC)机制生长的.
【Abstract】 Cylindrical and acerose Si 3N 4 whiskers were fabricated through combustion of Si with NaN 3 as additive as well as Si 3N 4 as diluent under 0.5—1 MPa of low nitrogen pressure. Decomposition of NaN 3 not only lowers the combustion temperature and nitrogen pressure required, but also increases the mass fraction of α -Si 3N 4. NaN 3 can also act as catalyst for the growth of Si 3N 4 whisker. Though the quantity of NaN 3 added must be sufficient to ensure the complete nitridation of Si under low nitrogen pressure, superabundant NaN 3 would result in the presence of Na 2Si 2O 5.It is inferred that the growth of as_synthesized Si 3N 4 whisker is controlled mainly by VC mechanism.
- 【文献出处】 硅酸盐学报 ,JOURNAL OF THE CHINESE CERAMIC SOCIETY , 编辑部邮箱 ,1998年06期
- 【分类号】TQ174.47
- 【被引频次】3
- 【下载频次】144