【摘要】 提出了一种新的生长过渡层的方法，并利用低压金属有机气相外延技术在InP衬底上生长出高质量GaAs外延材料，用X射线双晶衍射测得5μm厚GaAs外延层的（004）品面行射半高峰宽（FWHM）低至140arcsee。并制出GaAs金属半导体场效应晶体管（MESFET），其单位跨导为100mS／mm，可满足与长波长光学器件进行单片集成的需要。更多还原

【Abstract】 A new method for growing transition-layer has been presented, andhigh quality GaAs epilayers have been grown on InP substrate by low pressure metal organic vapour phase epitaxy (LP-MOVPE). The double-crystal X-ray diffraction (DCD) characterization of GaAs epilayer with the thickness of 5 μm shows thatthe full width at half maximum (FWHM) of (004) rocking curve is as low as 140arc sec. As a result, the GaAs metal semiconductor field effect transistors (MESFET) with the transconductance of 100 mS/mm have been fabricated, which can bemonolithically integrated with long wavelength optical components.更多还原