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剥离霍尔技术分析与实用中的问题
Technical Analysis and Application Problem in Stripping Hall Measurement
【摘要】 根据剥离霍尔技术的物理基础,分析了范德堡测试结构中薄膜材料在逐层测量时F因子发生变化的可能原因,主要归因于被测样品存在导电层厚度和电阻率不均匀性所致。而实验表明,采用阳极氧化技术控制膜厚的不均匀性可小于10%,因此导致F因子变化的主因是ρ(x,y)和θH(x,y)的存在。实验分析了F因子随深度的改变对纵向分布测量结果的影响,指出,当F因子随深度改变时,分析结果应该镇用;在作剥离霍尔测量时加测F因子是必要的,以作为利用分析结果的参考。
【Abstract】 According to the physical bases of stripping Hall measurement, thepossible variation origin of F factor with stripping depth in van der Pauw structureisanalysed in this paper. The variation origin is attributed to the uniformities of thethickness and resistivity of conduction layer in the measured sample. The experiment data show that the uniformity of thickness of conduction layer is superior to10% when the stripping thickness controled by anodic oxidation technology. Therefore the F factor variation results dominantly from the existence of ρ(x, y) andθH(x,y). The influence of the variation of F factor with depth on the logitudinaldistribution of parameters is investigated experimentally. It is pointed out thatwhen there is variation of F factor with depth, the applying the analysis resultneeds to be careful, and measuring of F factor may be required, so that it can beused as a reference in application of analysis result.
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1998年02期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】33