【摘要】 室温下采用ＶＳＭ测定了离子束溅射（ＩＢＳＤ）技术制备的Ｃｏ／Ｐｔ多层膜垂直方向的Ｍ－Ｈ回线。研究结果表明：Ｃｏ／Ｐｔ多层膜中单位体积Ｃｏ的饱和磁化强度ＭｓＣｏ小于块状Ｃｏ的饱和磁化强度；Ｃｏ／Ｐｔ多层膜的饱和磁化强度（Ｍｓ）与厚度有关：随Ｃｏ层厚度ｔＰｔ和多层膜总厚度ｔｆ的增加而增大，随Ｐｔ层厚度ｔｐｔ的增加而减小；外推结果表明当ｔＣｏ小于一个原子层厚（≈０２５ｎｍ）时，室温下Ｃｏ／Ｐｔ多层膜的饱和磁化强度为零，呈顺磁性更多还原

【Abstract】 The M-H loops have been measured in the direction of normal to Co/Pt MLs deposited by IBSD at room temperature by VSM. The results showed that the saturation magnetization of per unit volume Co in Co/Pt MLs, Ms Co , was smaller than that of bulk Co. It was also found that the saturation magnetization of Co/Pt MLs, Ms, was in relationship with thickness: it increased with increasing in the thickness of Co layer, t Co , and the total thickness of Co/Pt MLs, t f , but decreased with increasing in the thickness of Pt layer, t Pt . The extropolated results showed that Ms of Co/Pt MLs was zero at room temperature which meant that it was paramagnetic when t Co was thinner than mono-atom layer thickness(≈0 25nm).更多还原