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薄膜电致发光器件SiO2加速层的电子输运性质

TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER aSiO2 OF THIN FILMELECTROLUMINESCENT DEVICE

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【作者】 马义邝向军刘勇王平尹民楼立人夏上达

【Author】 Ma Yia,b) Kuang Xiangjunb) Liu Yongb) Wang Pingb) Yin Mingb) Lou Lirenb) Xia Shangdaa,b) a,b)(Structure Research Laboratory, USTC, Chinese Academy of Sciences, Hefei 230026) b)(Department of Physics, USTC, Hefei 2

【机构】 中国科学技术大学物理系

【摘要】 考虑了非晶效应和非晶无序弹性散射的影响,通过MonteCarlo方法模拟电子在薄膜电致发光器件(TFEL)的SiO2加速层的散射过程,从理论上描述了SiO2层的加速作用与电流倍增效应,获得了电子平均能量与场强的关系曲线、电离率、电流倍增因子,与实验结果符合较好

【Abstract】 he accelerating action and the current multiplication of SiO2 used in thin film electroluminescent device were studied theoretically using the Monte Carlo method to simulate the process of electron scattering in SiO2. The amorphous effect and the elastic scattering of disorder were considered. All the properties, such as the relation curve of the electron average energy and the electric field strength, ionization rate, current multiplication coefficient, coincided with the experimental data perfectly.

【基金】 国家自然科学基金
  • 【文献出处】 发光学报 ,CHINESE JOURNAL OF LUMINESCENCE , 编辑部邮箱 ,1998年02期
  • 【分类号】TN383.1
  • 【被引频次】2
  • 【下载频次】50
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