【摘要】 本文分析和计算了基区不同Ge含量的器件在碰撞电离和雪崩击穿效应下的电流和电压特性，结果表明，在其它参数相同的条件下，基区Ge含量越高的器件，虽然直流增益得到很大提高，但伴随着器件更容易发生载流子碰撞电离引起的基极电流反向和大注入下的基区push-out效应，同时器件共射击穿电压BVCEO也会大大的降低．由于在不同的电路中对器件的性能要求是不同的，本文的结论在具体的模拟电路中采用SiGeHBT器件的设计提供了指导更多还原

【Abstract】 In this paper, we analyse the current and voltage changes in SiGe HBT with various Ge contens in base by considering the impact ionization and avalanche breakdown effects. It shows that with the increase of Ge content in base, the base current reversal and base puse-out are easier to occur, and the common-emitter breakdown voltnge BVCEO is lower, too. Therefore, the design rules are different for SiGe HBT with different purposes. The results of this paper are usful for the design of SiGe HBT used in different analog integred circuits.更多还原