节点文献

ECR-PECVD制备UHF大功率管浅结芯片中Si₃N₄钝化膜的应用研究

Study on the Application of Si₃N₄ Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 Chen Junfang; Wang Weixiang(Institute of Quantum Electronics, South China Normal University, Guangzhou 510631)Ren Zhaoxing; Ding Zhenfeng(Institute of Plasma Physica, Academia Sinica, Hefei 230031)Wang Daoxiu; Song Yingen(China Huajing Electronics Group C

【机构】华南师范大学量电所!广州； 510631；中科院等离子体物理研究所!合肥； 230031；中国华晶电子集团公司!无锡； 214061；

【摘要】利用ECR－PECVD技术将Si3N4薄膜成功地应用于UHF大功率晶体管浅结芯片中的钝化膜，使芯片电特性有较好改善，完全避免了芯片后加工工序中划伤造成的芯片报废现象，提高了成品率，分析了Si3N4膜的钝化机理。更多还原

【Abstract】 The Si3N4 passivation films have been successfully used in the UHF high power semiconducting transistor shallow junction chip by ECR-PECVD. The electric properlies of passivated chip have been improved.The scratch of the chip has completely avoided in the post-process. The finished product rate has been increased. The passivation mechanism of Si3N4 thin film has been analyzed.更多还原